Monolithic 3D Inc., the Next Generation 3D-IC Company
  • Home
  • Technology
    • Technology
    • Papers, Presentations and Patents
    • Overview >
      • Background
      • Why Monolithic 3D?
      • Paths to Monolithic 3D
      • Applications
    • Ion-Cut: The Building Block
    • Monolithic 3D Logic >
      • RCAT
      • HKMG
      • Laser Annealing
      • RCJLT
      • 3D Embedded RAM
      • 3D Gate Array
      • FPGA
      • Ultra Large Integration - Redundancy and Repair
    • Monolithic 3D Memory >
      • 3D DRAM
      • 3D Resistive Memories
      • 3D Flash
    • Monolithic 3D Electro-Optics >
      • 3D Image Sensors
      • 3D Micro-Displays
  • 3D-IC Edge
    • 3D-IC Edge
  • News & Events
    • News & Events
    • S3S15 Game Change 2.0 Video/P
    • Webcast
    • Webinar
    • Press Releases
    • In the News
    • Upcoming Events
  • About Us
    • About Us
    • History
    • Team
    • Careers
    • Contact Us
  • Blog
  • Simulators


Comparison of Through-Silicon Via (TSV) 3D Technology and Monolithic 3D Technology

The semiconductor industry is actively pursuing 3D Integrated Circuits (3D-ICs) with Through-Silicon Via (TSV) technology (Fig. 8(a)). As shown in Fig 8(b), the International Technology Roadmap for Semiconductors (ITRS) [1] projects TSV pitch remaining in the range of several microns, while on-chip interconnect pitch is in the range of 100nm. The TSV pitch will not reduce appreciably in the future due stacked silicon layer thickness [1]. While the micron-ranged TSV pitches are enough for stacking memory atop processors and memory-on-memory stacking, they may not be enough to significantly mitigate the well-known on-chip interconnect problems [1]. Monolithic 3D-ICs offer through-silicon connections with <50nm diameter and therefore provide 10,000 times the areal density of TSV technology.

Picture
Figure 8: (a) Illustration of TSV in a 3D-IC, and (b) ITRS Projections.
© Copyright MonolithIC 3D Inc. , the Next-Generation 3D-IC Company, 2012 - All Rights Reserved, Patents Pending