Monolithic 3D Resistive Memories
Monolithic 3D IC technology is applied to producing a monolithically stacked single crystal silicon transistor selected RRAM or PCM memory. 1T-1R memory cells enjoy a low number of (shared) litho steps, Cu or Al wiring, and a scalable architecture. An efficient bipolar RRAM is now possible. Peripheral circuits below the monolithic memory stack deliver control functions.
Reduce bit cost of resistive memories without investing in expensive scaling down.
Our 3D resistive memory technology provides:
- Shared litho steps to create stacked memory at low cost
- Compatible with whatever resistive material you choose
- Single crystal Si junctionless transistor selectors allow bipolar operation