Highlights
More than 400 issued United States patents across 3D NAND, high bandwidth memory, hybrid bonding, and backside power delivery.
Licenses are offered by product and technology category.
Licenses are offered by product and technology category.
Samsung’s new NAND generation is called Bonding V-NAND, and its next HBM concept stacks memory directly above the AI accelerator. Our comment on an architecture we have been teaching since 2010.
We are proud to announce that our research, “Design of Highly Stackable Charge Trap-Based 3D DRAM”, was recognized with the Best Paper Award at IEEE TENCON 2025. This work proposes a highly stackable charge trap-based 3D DRAM architecture designed to address key challenges in future memory technologies, including scalability, power consumption, and thermal management. The proposed architecture demonstrates strong potential for next-generation high-density memory systems and emerging memory platforms.
MonolithIC 3D in the Korean Press (July 2026)
Three of Korea’s leading business dailies interviewed our CEO in July 2026: Money Today (‘We Have Been Researching Semiconductor Stacking In-House Since 2009’), Hankyung, and Financial News (‘Litigation is a means, not an end’). English translations are on our In the News page.
At its June 2026 Investor Day, Qualcomm announced High Bandwidth Compute: an LPDDR memory stack placed directly on a compute die. Our comment on twelve years of Qualcomm and the monolithic 3D direction.
For over 4 decades the gap between computer processing speed and memory access has grown at about 50% per year, to more than 1,000x today. This provides an excellent opportunity to enhance the single-core system performance. An innovative 3D integration technology combined with re-architecting the integrated memory device is proposed to bridge the gap and enable a 1,000 x improvement in computer systems. The proposed technology utilizes processes that are widely available and could be integrated in products within a very short time.
A Game Changer for Monolithic 3D - monolithic 3D IC without the need for a new recipe for transistor formation. The process could be adapted by any current fab providing very competitive costs offering for long term road map for better offerings
Monolithic 3D: The Most Effective Path for Future IC Scaling
A technology breakthrough allows the fabrication of semiconductor devices with multiple tiers of copper connected active devices utilizing conventional fab equipment. MonolithIC 3D Inc. offers solutions for logic and memory technologies, with significant benefits for cost, power and operating speed. The company believes in collaboration with existing players in the semiconductor industry.